Samsung is working on developing next-gen 3D DRAM on American soil. The lab for this development is based in Silicon Valley, under the “Device Solutions America” division. The goal is to develop an upgraded DRAM model, allowing Samsung to take leadership of the global 3D DRAM market.
The benefits of 3D DRAM are promising, with new structures for sub-10nm DRAM allowing for larger single-chip capacities that can exceed 100 gigabits.
This tech could push the envelope forward regarding memory capacity and improve performance in that constrained workload.
Read More : Samsung opens next-gen 3D DRAM research lab in the United States
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